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| Power Transistors 2SC4111 Silicon NPN triple diffusion planar type For horizontal deflection output 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE (TC=25C) Ratings 1500 1500 700 7 22 10 3.5 150 3.5 150 -55 to +150 Unit V V V V A A A W C C 26.00.5 10.0 1.5 2.0 4.0 1.5 20.00.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 2.00.3 3.00.3 1.00.2 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 1:Base 2:Collector 3:Emitter TOP-3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol ICBO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 750V, IE = 0 VCB = 1500V, IE = 0 IC = 1mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 7A IC = 7A, IB = 2.5A IC = 7A, IB = 2.5A VCE = 10V, IC = 1A, f = 0.5MHz IC = 6A, Lleak = 5H, IB1 = 1.7A, IB2 = -1.7A 2 12 0.6 7 5 3 8 5 1.5 V V MHz s s min typ max 10 1 Unit A mA V 2.0 1.5 3.0 1 Power Transistors PC -- Ta 200 2SC4111 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 12 TC=25C 10 100 IC/IB=2.8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC Collector power dissipation PC (W) 150 Collector current IC (A) (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink IB=2A 8 1A 6 0.7A 0.5A 4 0.2A 2 0.1A 0.05A 0 TC=100C 25C -25C 100 50 (2) 0 0 20 40 (3) 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=2.8 1000 VCE=5V 100 fT -- IC VCE=10V f=0.5MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 1 3 10 30 10 100 10 3 30 TC=100C 25C 3 1 TC=-25C 100C 10 -25C 1 0.3 25C 3 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25C 30 ICP IC 10ms DC 1 0.3 0.1 0.03 Non repetitive pulse TC=25C Area of safe operation, horizontal operation ASO 40 35 f=15.75kHz, TC=25C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation ICP Collector output capacitance Cob (pF) 3000 Collector current IC (A) Collector current IC (A) 10 3 t=1ms 30 25 20 15 10 5 1000 300 100 30 <1mA 10 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 0 0 200 400 600 800 1000 1200 1400 1600 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SC4111 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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